High-K Gate Dielectrics (Materials Science and Engineering)

Rating:
Summary: "Timely review of a rapidly evolving research field"
Review: [...]

Contents

*Introduction
*The need for high-k gate dielectrics and materials requirement
*Deposition techniques - ALCVD, MOCVD, PLD, MBE,
*Characterization
Physico-chemical characterization, X-ray and electron spectroscopies, Oxygen diffusion and thermal stability , Defect characterization by ESR, Band alignment determined by photo-injection , Electrical characteristics Theory
Theory of defects in high-k materials, Bonding constraints and defect formation at Si/high-k interfaces, Band alignment calculations, Electron mobility at the Si/high-k interface, Model for defect generation during electrical stress
*Technological aspects
Device integration issues, Device concepts for sub-100 nm CMOS technologies, Transistor characteristics, Non-volatile memories based on high-k ferroelectric layers

**Synopsis
The drive towards smaller and smaller electronic componentry has huge implications for the materials currently being used. Conventional materials will be unable to function at scales much smaller than those in current use, as quantum mechanical effects will begin to dominate. For this reason new materials with higher electrical permittivity will be required, and this is a subject of intensive research activity within the microelectronics community.

This book reviews the state-of-the-art in high permittivity gate dielectric research. Consisting of contributions from leading researchers from Europe and the USA, the first chapter describes the various deposition techniques used for construction of layers at these dimensions. The second chapter considers characterization techniques of the physical, chemical, structural and electronic properties of these materials. The third chapter reviews the theoretical work done in the field, and the final section is devoted to technological applications.

**Published Reviews:
"Michel Houssa's edited volume High-K Gate Dielectrics is a timely review of this rapidly evolving research field. The individual chapters provide a complete, in-depth coverage of current understanding, making the book an excellent source of reference for researchers in High-K gate dielectrics and, in particular, for newcomers to the field. The impressive work and methods presented in these chapters should make the book of interest for a readership beyond those immediately involved in high-k gate dielectric research. I recommend the book as a very good reference sourse and overview to researchers with interest in high-k gate dielectrics.

Susanne Stemmer, Materials Today, Sept '04


Readership
Graduate students and researchers in applied physics and electrical and electronic engineering