Handbook of III-V Heterojunction Bipolar Transistors

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Summary: The content of the book
Review: I am William Liu, the author. People ask me about the content of the book enough times that, I'd like to put it here.

Chapter 1: Basic Properties and Device Physics of III-V Materials
1-1 semiconductor crystalline properties
1-2 molecular beam epitaxy
1-3 metalorganic chemical vapor deposition
1-4 lattice-mismatched layers
1-5 basic device physics
1-6 continuity equations and quasi-neutrality assumption
1-7 material parameters

Chapter 2 Two-Terminal Heterojunctin Devices
2-1 p+-N heterojunction under termal equilibrium
2-2 p+-N heterojunction under external bias
2-3 p-N+, P+-n, and P-n+ heterojunctions
2-4 graded heterojunctins
2-5 diode current-voltage characteristics
2-6 space charge recombination and generation currents
2-7 isotype heterojunctions

Chapter 3 DC Current Gain
3-1 basic transistor operation
3-2 base current components
3-3 collector current ideality factor
3-4 current gain flattening
3-5 surface passivation
3-6 surface current ideality factor
3-7 base contact recombination
3-8 temperature dependence
3-9 base quasi-electric field
3-10 analytical solution of the continuity equation
3-11 critical base-emitter contact spacing
3-12 minority-carrier lateral diffusion length
3-13 device simulator results
3-14 parasititc conduction in the passivation ledge

Chapter 4 Nonideal DC Characteristics
4-1 current gain fall-off mechanisms
4-2 emitter crowding
4-3 d.c. intrinsic base resistance
4-4 emitter doping effects
4-5 Kirk effects
4-6 self-heating effects
4-7 two-dimensional current flow
4-8 avalanche breakdown
4-9 leakage current
4-10 knee voltage and offset voltage
4-11 current gain oscillation

Chapter 5 Thermal-Electrical Properties
5-1 the heat conduction equation
5-2 steady-state junctin temperature due to self-heating
5-3 thermal-electrical coupling
5-4 temperature-dependent thermal conductivity
5-5 experimental determination of steady-state junction temperature
5-6 transient thermal response
5-7 temperature at the metal strip line
5-8 thermal resistance in a dot structure
5-9 heat conduction through electrical carriers

Chapter 6 Collapse of Current Gain
6-1 basic characteristics
6-2 collapse loci, regression loci, and s-factor loci
6-3 gain collapse in one-finger HBT?
6-4 thermal coupling
6-5 numerical model
6-6 prevention techniques
6-7 base ballasting
6-8 substrate temperature effects
6-9 interaction with avalanche breakdown
6-10 constant Vbe and common-base operations
6-11 collapse inverter
6-12 gain collapse in GaInP/GaAs HBTs
6-13 gain collapse in InP/InGaAs HBTs
6-14 Newton-Raphson numerical technique

Chapter 7 Failure Mechanisms and Reliability Issues
7-1 failure mechanisms of AlGaAs/GaAs HBTs
7-2 Si BJTs versus AlGaAs/GaAs HBTs
7-3 safe operating area
7-4 failure mechanisms of InP/InGaAs HBTs
7-5 reliability basics
7-6 degrdation characteristics
7-7 degradation mechanisms

Chapter 8 Small-Signal Properties
8-1 a simple circuit model
8-2 intrinsic common-base y-parameters
8-3 intrinsic common-emitter y-parameters
8-4 r.f. intrinsic base impedance
8-5 hybrid-pi model
8-6 intrinsic z- h- and s-parameters
8-7 base quasi-electric field
8-8 epitaxial resistances
8-9 contact resistances
8-10 cutoff frequency (fT)
8-11 maximum oscillation frequency (fmax)
8-12 second-order small-signal model
8-13 second-order expression for fT
8-14 second-order expression for fmax
8-15 inductance effects

Chapter 9 Epitaxial Layer Design
9-1 example: calculatin of fT and fmax
9-2 emitter layer design
9-3 collector layer design
9-4 double collector and inverter-field collector designs
9-5 subcollector layer design
9-6 base layer design
9-7 dopant-graded base

Chapter 10 Geometrical Layout Design
10-1 emitter width design
10-2 base contact width design
10-3 contact spacing and collector contact width design
10-4 emitter length design (base metal resistance consideration)
10-5 emitter length design (thermal consideration)
10-6 dot geometry transistor design
10-7 comparison of stripe and dot geometries

Chapter 11 Power Amplifier
11-1 sinusoidal power
11-2 small-signal power amplifier
11-3 large-signal power amplifier
11-4 power gain and power-added-efficiency
11-5 overdriven and selectively tuned amplifiers
11-6 sources of undesirable power dissipations
11-7 emitter inductance
11-8 unit-cell design

Chapter 12 Distortion and Noise
12-1 harmonic distortion
12-2 intermodulation distortions and two-tone characteristics
12-3 mixer
12-4 differential pair
12-5 noise characteristics
12-6 noise figure

Chapter 13 Switching Characteristics and SPICE Models
13-1 basic charge-control model
13-2 second-order analysis
13-3 rise time and fall time
13-4 switching of transistors in saturation
13-5 storage charge
13-6 junction capacitive charges
13-7 Ebers-Moll SPICE model
13-8 Gummel-Poon SPICE model
13-9 area and temeprature dependences and noise models
13-10 extraction of SPICE parameters

Chapter 14 Transistor Fabrication
14-1 d.c. fabrication process
14-2 single-figner-device r.f. fabrication process
14-3 GaInP (InP) and InGaAs processing
14-4 MMIC r.f. fabrication process
14-5 ashering effects

Chapter 15 Measured Transistor Performances
15-1 d.c. characteristics
15-2 small-signal characteristics
15-3 high-frequency performance at high current
15-4 emitter doping effects
15-5 Pnp HNTs
15-6 d.c. current gain and cutoff frequency
15-7 electron saturation velocity in GaIP
15-8 InP based HBTs
15-9 unit-cell large-signal results
15-10 GaInP/GaAs/GaInP DHBT characteristics
15-11 linearity characteristics
15-12 MMIC amplifier performance
15-13 latterally etched undercut results
15-14 1/f noise characteristics
15-15 HBT-on-Si
15-16 conductive substrate and leaky subcollector




Rating:
Summary: Good Book for HBTs
Review: It is a good book for HBTs with a lot of details in it.